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SMMUN2213LT1G Технические параметры

AMI Semiconductor  SMMUN2213LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка AMI Semiconductor
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 100mA
Other Names SMMUN2213LT1G-ND SMMUN2213LT1GOSTR
Series -
Packaging Tape & Reel (TR)
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number MMUN22**L
Power - Max 246mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms
Просмотр сходства
SMMUN2213LT1G brand manufacturers: AMI Semiconductor, Anli stock, SMMUN2213LT1G reference price.AMI Semiconductor. SMMUN2213LT1G parameters, SMMUN2213LT1G Datasheet PDF and pin diagram description download.You can use the SMMUN2213LT1G Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find SMMUN2213LT1G pin diagram and circuit diagram and usage method of function,SMMUN2213LT1G electronics tutorials.You can download from the Anli.