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BLC9G20LS-361AVT Технические параметры

Ampleon  BLC9G20LS-361AVT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка Ampleon
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 2Elements per Chips
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 13
Maximum Gate Threshold Voltage (V) 2.5
Maximum VSWR 10
Maximum Gate Source Leakage Current (nA) 280
Maximum IDSS (uA) 2.8
Maximum Drain Source Resistance (mOhm) [email protected]
Свойство продукта Значение свойства
Typical Forward Transconductance (S) 1.27
Output Power (W) 360
Typical Power Gain (dB) 15.7
Maximum Frequency (MHz) 1990
Minimum Frequency (MHz) 1805
Typical Drain Efficiency (%) 47.5
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 225
Military No
Part Status LTB
Configuration Dual Common Source
Channel Type N
Mode of Operation 1-Carrier W-CDMA
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BLC9G20LS-361AVT Документы

BLC9G20LS-361AVT brand manufacturers: Ampleon, Anli stock, BLC9G20LS-361AVT reference price.Ampleon. BLC9G20LS-361AVT parameters, BLC9G20LS-361AVT Datasheet PDF and pin diagram description download.You can use the BLC9G20LS-361AVT Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find BLC9G20LS-361AVT pin diagram and circuit diagram and usage method of function,BLC9G20LS-361AVT electronics tutorials.You can download from the Anli.