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BLF10H6600PS Технические параметры

Ampleon  BLF10H6600PS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка Ampleon
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 110
Maximum Gate Source Voltage (V) 11
Maximum Gate Threshold Voltage (V) 2.4
Maximum VSWR 40
Maximum Gate Source Leakage Current (nA) 280
Maximum IDSS (uA) 2.8
Maximum Drain Source Resistance (mOhm) 143(Typ)@6.15V
Typical Input Capacitance @ Vds (pF) 220@50V
Typical Reverse Transfer Capacitance @ Vds (pF) 1.2@50V
Typical Output Capacitance @ Vds (pF) 74@50V
Output Power (W) 600(Typ)
Typical Power Gain (dB) 20.8|19.8
Maximum Frequency (MHz) 1000
Minimum Frequency (MHz) 400
Typical Drain Efficiency (%) 58
Minimum Operating Temperature (°C) -65
Свойство продукта Значение свойства
Maximum Operating Temperature (°C) 225
Supplier Package SOT-539B
Military No
Mounting Surface Mount
Package Height 4.7(Max)
Package Length 32.77(Max)
Package Width 10.29(Max)
PCB changed 5
Package Description ,
Manufacturer Part Number BLF10H6600PS
Manufacturer Ampleon
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer AMPLEON NETHERLANDS B V
Risk Rank 5.21
Part Status Active
Reach Compliance Code unknown
Pin Count 5
Configuration Dual Common Source
Channel Type N
Mode of Operation Pulsed RF Class-AB|2-Tone Class-AB
RoHS Status RoHS Compliant
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BLF10H6600PS Документы

BLF10H6600PS brand manufacturers: Ampleon, Anli stock, BLF10H6600PS reference price.Ampleon. BLF10H6600PS parameters, BLF10H6600PS Datasheet PDF and pin diagram description download.You can use the BLF10H6600PS Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find BLF10H6600PS pin diagram and circuit diagram and usage method of function,BLF10H6600PS electronics tutorials.You can download from the Anli.