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BLF644P Технические параметры

Ampleon  BLF644P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка Ampleon
ECCN (US) EAR99
Channel Mode Depletion
Number of Elements per Chip 2Elements per Chips
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 11
Maximum Gate Threshold Voltage (V) 2.4
Maximum VSWR 10
Maximum Gate Source Leakage Current (nA) 50
Maximum IDSS (uA) 1.4
Maximum Drain Source Resistance (mOhm) 300(Typ)@6.15V
Typical Input Capacitance @ Vds (pF) 39@32V
Typical Reverse Transfer Capacitance @ Vds (pF) 0.84@32V
Typical Output Capacitance @ Vds (pF) 15@32V
Typical Forward Transconductance (S) 3.3
Output Power (W) 100(Typ)
Typical Power Gain (dB) 23.5
Свойство продукта Значение свойства
Maximum Frequency (MHz) 1300
Minimum Frequency (MHz) 10
Typical Drain Efficiency (%) 66
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Package CDFM
Military No
Mounting Screw
Package Height 5.2(Max)
Package Length 29.08(Max)
Package Width 5.97(Max)
PCB changed 5
Part Status Active
Pin Count 5
Configuration Dual Common Source
Channel Type N
Mode of Operation CW
RoHS Status RoHS Compliant

BLF644P Документы

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