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BLF647P Технические параметры
Ampleon BLF647P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | Ampleon | |
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Channel Mode | Enhancement | |
| ECCN (US) | EAR99 | |
| Typical Power Gain (dB) | 18|18|18|18|18|18|18|18|18|18|19|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18 | |
| Output Power (W) | 200 | |
| Typical Output Capacitance @ Vds (pF) | 30@32V | |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 1.3@32V | |
| Typical Input Capacitance @ Vds (pF) | 78@32V | |
| Maximum Drain Source Resistance (mOhm) | 140(Typ)@6.15V | |
| Maximum IDSS (uA) | 1.4 | |
| Maximum Gate Source Leakage Current (nA) | 50 | |
| Maximum VSWR | 10 | |
| Maximum Gate Threshold Voltage (V) | 2.4 | |
| Maximum Gate Source Voltage (V) | 11 | |
| Maximum Drain Source Voltage (V) | 65 | |
| Process Technology | LDMOS | |
| Number of Elements per Chip | 2Elements per Chips | |
| Military | No | |
| Supplier Package | CDFM | |
| Maximum Operating Temperature (°C) | 200 | |
| Minimum Operating Temperature (°C) | -65 | |
| Typical Drain Efficiency (%) | 70 | |
| Minimum Frequency (MHz) | 10 | |
| Maximum Frequency (MHz) | 1500 | |
| Package Width | 9.91(Max) | |
| Package Length | 34.16(Max) | |
| Package Height | 4.75(Max) | |
| Mounting | Screw | |
| PCB changed | 5 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Description | FLANGE MOUNT, R-CDFM-F4 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BLF647P | |
| Package Shape | RECTANGULAR | |
| Manufacturer | NXP Semiconductors | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Risk Rank | 5.63 | |
| Pbfree Code | Yes | |
| Part Status | Active | |
| ECCN Code | EAR99 | |
| Additional Feature | ESD PROTECTED, HIGH RELIABILITY | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 5 | |
| JESD-30 Code | R-CDFM-F4 | |
| Configuration | Dual Common Source | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 65 V | |
| Channel Type | N | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| Mode of Operation | CW Class-B|Pulsed RF|Class-AB|2-Tone Class-AB | |
| RoHS Status | RoHS Compliant |
BLF647P Документы
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