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BLP10H610 Технические параметры

Ampleon  BLP10H610 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка Ampleon
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 2Elements per Chips
Process Technology LDMOS
Maximum Drain Source Voltage (V) 104
Maximum Gate Source Voltage (V) 11
Maximum Gate Threshold Voltage (V) 1.8(Typ)
Maximum Gate Source Leakage Current (nA) 120
Maximum IDSS (uA) 1.2
Maximum Drain Source Resistance (mOhm) 4.28(Typ)
Output Power (W) 20
Typical Power Gain (dB) 22
Maximum Frequency (MHz) 1400
Minimum Frequency (MHz) 10
Свойство продукта Значение свойства
Typical Drain Efficiency (%) 58(Max)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Package HVSON EP
Military No
Mounting Surface Mount
Package Height 0.82
Package Length 6
Package Width 5
PCB changed 12
Part Status Active
Pin Count 12
Configuration Dual Common Source
Channel Type N
Mode of Operation CW
RoHS Status RoHS Compliant
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BLP10H610 Документы

BLP10H610 brand manufacturers: Ampleon, Anli stock, BLP10H610 reference price.Ampleon. BLP10H610 parameters, BLP10H610 Datasheet PDF and pin diagram description download.You can use the BLP10H610 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find BLP10H610 pin diagram and circuit diagram and usage method of function,BLP10H610 electronics tutorials.You can download from the Anli.