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BLP8G27-5 Технические параметры

Ampleon  BLP8G27-5 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка Ampleon
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 13
Maximum Gate Threshold Voltage (V) 2.3
Maximum VSWR 10
Maximum Gate Source Leakage Current (nA) 140
Maximum IDSS (uA) 1.4
Maximum Drain Source Resistance (mOhm) 2000(Typ)@3.75V
Typical Forward Transconductance (S) 0.08
Output Power (W) 5
Typical Power Gain (dB) 18
Maximum Frequency (MHz) 2700
Свойство продукта Значение свойства
Minimum Frequency (MHz) 700
Typical Drain Efficiency (%) 17
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 225
Supplier Package HVSON EP
Military No
Mounting Surface Mount
Package Height 0.82
Package Length 6
Package Width 4
PCB changed 16
Part Status Active
Pin Count 16
Configuration Single Dual Drain Dual Gate
Channel Type N
Mode of Operation Pulsed CW
RoHS Status RoHS Compliant
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BLP8G27-5 Документы

BLP8G27-5 brand manufacturers: Ampleon, Anli stock, BLP8G27-5 reference price.Ampleon. BLP8G27-5 parameters, BLP8G27-5 Datasheet PDF and pin diagram description download.You can use the BLP8G27-5 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find BLP8G27-5 pin diagram and circuit diagram and usage method of function,BLP8G27-5 electronics tutorials.You can download from the Anli.