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BLF888B,112 Технические параметры
Ampleon USA Inc. BLF888B,112 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Factory Lead Time | 13 Weeks | |
| Package / Case | SOT539A | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Voltage Rated | 104V | |
| Packaging | Tray | |
| Published | 2010 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 860MHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BLF888 | |
| Reference Standard | IEC-60134 | |
| JESD-30 Code | R-CDFM-F4 | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| Operating Mode | ENHANCEMENT MODE | |
| Current - Test | 1.3A | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS (Dual), Common Source | |
| Gain | 21dB | |
| DS Breakdown Voltage-Min | 104V | |
| Power - Output | 250W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 50V | |
| RoHS Status | ROHS3 Compliant |
BLF888B,112 Документы
- DatasheetsBLF888B(S)
- PCN Assembly/OriginSite Chg 30/Jan/2016
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