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BLP8G21S-160PVY Технические параметры
Ampleon USA Inc. BLP8G21S-160PVY technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Factory Lead Time | 13 Weeks | |
| Package / Case | SOT-1221-1 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Voltage Rated | 65V | |
| Packaging | Tape & Reel (TR) | |
| Published | 2011 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 1.88GHz~1.92GHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Reference Standard | IEC-60134 | |
| JESD-30 Code | R-PDFP-F6 | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| Operating Mode | ENHANCEMENT MODE | |
| Current - Test | 600mA | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS (Dual), Common Source | |
| Gain | 17.5dB | |
| DS Breakdown Voltage-Min | 65V | |
| Power - Output | 20W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 28V | |
| RoHS Status | ROHS3 Compliant |
BLP8G21S-160PVY Документы
- DatasheetsBLP8G21S-160PV
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