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DS1270AB-70IND# Технические параметры
Analog Devices DS1270AB-70IND# technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Lifecycle Status | EOL (Last Updated: 3 years ago) | |
| Mounting Type | Through Hole | |
| Package / Case | 36-DIP Module (0.610, 15.49mm) | |
| Number of Pins | 36Pins | |
| Supplier Device Package | 36-EDIP | |
| RoHS | Compliant | |
| Memory Types | Non-Volatile, RAM, SRAM | |
| Package | Tube | |
| Base Product Number | DS1270AB | |
| Mfr | Analog Devices Inc./Maxim Integrated | |
| Product Status | Obsolete | |
| Packaging | Bulk | |
| Operating Temperature | -40°C ~ 85°C (TA) | |
| Series | - | |
| Max Operating Temperature | 85 °C | |
| Min Operating Temperature | -40 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Technology | NVSRAM (Non-Volatile SRAM) | |
| Voltage - Supply | 4.75V ~ 5.25V | |
| Frequency | 70 GHz | |
| Operating Supply Voltage | 5 V | |
| Interface | Parallel | |
| Max Supply Voltage | 5.25 V | |
| Min Supply Voltage | 4.75 V | |
| Memory Size | 2 MB | |
| Access Time | 70 ns | |
| Memory Format | NVSRAM | |
| Memory Interface | Parallel | |
| Data Bus Width | 8 b | |
| Write Cycle Time - Word, Page | 70ns | |
| Density | 16 Mb | |
| Memory Organization | 2M x 8 | |
| Radiation Hardening | No | |
| Lead Free | Contains Lead |
DS1270AB-70IND# Документы
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