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BJR10M-TDT-P-F Технические параметры
Autonics BJR10M-TDT-P-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optical Sensors - Photoelectric, Industrial | |
| Марка | Autonics | |
| Mounting Type | Through Hole | |
| Package / Case | 16-DIP (0.300, 7.62mm) | |
| Supplier Device Package | 16-PDIP | |
| Package | Bulk | |
| Base Product Number | DG445 | |
| Mfr | Harris Corporation | |
| Channel-to-Channel Matching (ΔRon) | 4Ohm (Max) | |
| Product Status | Active | |
| Package Style | Cubic | |
| Manufacturer Part Number | BJR10M-TDT-P-F | |
| Manufacturer | Autonics | |
| Operating Temperature | -40°C ~ 85°C (TA) | |
| Series | - | |
| Composition | Non-Metallic | |
| Voltage - Supply | 10V ~ 30V | |
| Ingress Protection | IP67 | |
| Output Type | PNP | |
| Number of Circuits | 4Circuits | |
| Output Configuration | PNP - Open Collector, Light-ONDark-ON |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Cable Length | 78.7 (2000.00mm) | |
| Operating Mode | Light/Dark On | |
| Response Time | 1ms | |
| Adjustment Type | Adjustable | |
| Sensing Distance | 32.81 (10m) | |
| -3db Bandwidth | - | |
| On-State Resistance (Max) | 85Ohm | |
| Sensing Method | Through-Beam | |
| Multiplexer/Demultiplexer Circuit | 1:1 | |
| Current - Leakage (IS(off)) (Max) | 500pA | |
| Channel Capacitance (CS(off), CD(off)) | 4pF, 4pF | |
| Switch Circuit | SPST - NC | |
| Switch Time (Ton, Toff) (Max) | 250ns, 170ns | |
| Charge Injection | 5pC | |
| Crosstalk | -100dB @ 1MHz | |
| Connection Method | Cable | |
| Light Source | Red (660nm) | |
| Voltage - Supply, Single (V+) | 5V ~ 34V | |
| Voltage - Supply, Dual (V±) | ±5V ~ 22V | |
| Connection Type | Cable | |
| Power Type | DC |
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