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OP506D Технические параметры
BI Technologies OP506D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optical Sensors - Phototransistors | |
| Марка | BI Technologies | |
| Package / Case | Wide 2516 (6440 Metric), 1625 | |
| Mount | Through Hole | |
| Number of Pins | 2Pins | |
| Supplier Device Package | SMD | |
| Package | Tray | |
| Mfr | Vishay Foil Resistors (Division of Vishay Precision Group) | |
| Product Status | Active | |
| Collector-Emitter Breakdown Voltage | 30 V | |
| Number of Elements | 1 Element | |
| RoHS | Compliant | |
| Operating Temperature | -55°C ~ 150°C | |
| Series | VCS1625ZP | |
| Size / Dimension | 0.160 L x 0.250 W (4.06mm x 6.35mm) | |
| Tolerance | ±0.2% | |
| Number of Terminations | 4Terminations | |
| Temperature Coefficient | ±0.2ppm/°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Resistance | 10 Ohms | |
| Max Operating Temperature | 100 °C | |
| Min Operating Temperature | -40 °C | |
| Composition | Metal Foil | |
| Power (Watts) | 1W | |
| Max Power Dissipation | 100 mW | |
| Orientation | Top View | |
| Output Voltage | 30 V | |
| Failure Rate | - | |
| Polarity | NPN | |
| Power Dissipation | 100 mW | |
| Collector Emitter Voltage (VCEO) | 5 V | |
| Max Collector Current | 3 mA | |
| Power Consumption | 100 mW | |
| Wavelength | 935 nm | |
| Dark Current | 100 nA | |
| Features | Current Sense, Moisture Resistant, Non-Inductive | |
| Height Seated (Max) | 0.040 (1.02mm) |
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