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P166P11R3NB203 Технические параметры

BI Technologies  P166P11R3NB203 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Rotary Potentiometers, Rheostats
Марка BI Technologies
Emitter- Base Voltage VEBO 4 V
Pd - Power Dissipation 150 W
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 25
Minimum Operating Temperature - 65 C
Mounting Styles Through Hole
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
RoHS Details
Collector- Emitter Voltage VCEO Max 75 V
Voltage, Rating 200 VAC
Factory Pack QuantityFactory Pack Quantity 1600
Shaft Type Round / Plain
Shaft Length 20 mm
Packaging Tray
Series P166
Tolerance 20 %
Свойство продукта Значение свойства
Type RF Bipolar Power
Resistance 20 kOhms
Subcategory Transistors
Power Rating 200 mW (1/5 W)
Technology Si
Orientation Horizontal Adjustment
Termination Style Solder Lug
Operating Frequency 225 MHz
Product Type RF Bipolar Transistors
Transistor Type Bipolar Power
Number of Turns 1 TurnTurn
Taper Linear
Number of Gangs 1 GangGang
Continuous Collector Current 15 A
Element Type Conductive Plastic
Product Potentiometer
Product Category RF Bipolar Transistors
Shaft Diameter 6 mm
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