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BD546B-S Технические параметры

Bourns Inc.  BD546B-S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3Pins
Supplier Device Package SOT-93
Collector-Emitter Breakdown Voltage 80V
Current-Collector (Ic) (Max) 15A
Number of Elements 1 Element
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Свойство продукта Значение свойства
Max Power Dissipation 3.5W
Base Part Number BD546
Polarity PNP
Element Configuration Single
Power Dissipation 85W
Power - Max 3.5W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 10A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1V @ 2A, 10A
Voltage - Collector Emitter Breakdown (Max) 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
Просмотр сходства

BD546B-S Документы

BD546B-S brand manufacturers: Bourns Inc., Anli stock, BD546B-S reference price.Bourns Inc.. BD546B-S parameters, BD546B-S Datasheet PDF and pin diagram description download.You can use the BD546B-S Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BD546B-S pin diagram and circuit diagram and usage method of function,BD546B-S electronics tutorials.You can download from the Anli.