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BDV65A-S Технические параметры

Bourns Inc.  BDV65A-S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3Pins
Supplier Device Package SOT-93
Collector-Emitter Breakdown Voltage 80V
Current-Collector (Ic) (Max) 12A
Number of Elements 1 Element
hFEMin 1000
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Свойство продукта Значение свойства
Min Operating Temperature -65°C
Max Power Dissipation 3.5W
Base Part Number BDV65
Polarity NPN
Element Configuration Single
Power - Max 3.5W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 12A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 2V @ 20mA, 5A
Voltage - Collector Emitter Breakdown (Max) 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
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BDV65A-S Документы

BDV65A-S brand manufacturers: Bourns Inc., Anli stock, BDV65A-S reference price.Bourns Inc.. BDV65A-S parameters, BDV65A-S Datasheet PDF and pin diagram description download.You can use the BDV65A-S Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BDV65A-S pin diagram and circuit diagram and usage method of function,BDV65A-S electronics tutorials.You can download from the Anli.