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BDV65C-S Технические параметры
Bourns Inc. BDV65C-S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-218-3 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | SOT-93 | |
| Collector-Emitter Breakdown Voltage | 120V | |
| Current-Collector (Ic) (Max) | 12A | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Tube | |
| Published | 1993 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Min Operating Temperature | -65°C | |
| Max Power Dissipation | 3.5W | |
| Base Part Number | BDV65 | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Power - Max | 3.5W | |
| Transistor Type | NPN - Darlington | |
| Collector Emitter Voltage (VCEO) | 120V | |
| Max Collector Current | 12A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A 4V | |
| Current - Collector Cutoff (Max) | 2mA | |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 20mA, 5A | |
| Voltage - Collector Emitter Breakdown (Max) | 120V | |
| Collector Base Voltage (VCBO) | 120V | |
| Emitter Base Voltage (VEBO) | 5V | |
| RoHS Status | ROHS3 Compliant |
BDV65C-S Документы
- DatasheetsBDV65x
- PCN Obsolescence/ EOLSOT-93 Bipolar Transistors 03/Apr/2012
- ConflictMineralStatementBourns-company-36.pdf
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