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BDW54A-S Технические параметры

Bourns Inc.  BDW54A-S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Свойство продукта Значение свойства
HTS Code 8541.29.00.95
Max Power Dissipation 2W
Base Part Number BDW54
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Power - Max 2W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A 3V
Current - Collector Cutoff (Max) 500μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 4V @ 40mA, 4A
Collector Base Voltage (VCBO) 60V
Radiation Hardening No
RoHS Status ROHS3 Compliant

BDW54A-S Документы

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