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BDW94B-S Технические параметры

Bourns Inc.  BDW94B-S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Number of Elements 1 Element
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Max Power Dissipation 2W
Base Part Number BDW94
Свойство продукта Значение свойства
JESD-30 Code R-PSFM-T3
Polarity PNP
Element Configuration Single
Case Connection COLLECTOR
Power - Max 2W
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 12A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 5A 3V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Просмотр сходства

BDW94B-S Документы

BDW94B-S brand manufacturers: Bourns Inc., Anli stock, BDW94B-S reference price.Bourns Inc.. BDW94B-S parameters, BDW94B-S Datasheet PDF and pin diagram description download.You can use the BDW94B-S Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BDW94B-S pin diagram and circuit diagram and usage method of function,BDW94B-S electronics tutorials.You can download from the Anli.