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BIDD05N60T Технические параметры

Bourns Inc.  BIDD05N60T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252 (DPAK)
Mfr Bourns Inc.
Product Status Active
Current-Collector (Ic) (Max) 10 A
Test Conditions 400V, 5A, 10Ohm, 15V
Base Product Number BIDD05N
Maximum Gate Emitter Voltage ±30V
Package Type TO-252
Maximum Collector Emitter Voltage 600 V
Moisture Sensitive Yes
Pd - Power Dissipation 82 W
Maximum Operating Temperature + 150 C
Collector-Emitter Saturation Voltage 1.5 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 2500
Continuous Collector Current at 25 C 10 A
Mounting Styles SMD/SMT
Manufacturer Bourns
Свойство продукта Значение свойства
Brand Bourns
Continuous Collector Current Ic Max 10 A
RoHS Details
Collector- Emitter Voltage VCEO Max 600 V
Series -
Operating Temperature -55°C ~ 150°C (TJ)
Packaging MouseReel
Subcategory IGBTs
Technology Si
Configuration Single Diode
Input Type Standard
Power - Max 82 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 5A
IGBT Type Trench Field Stop
Gate Charge 18.5 nC
Current - Collector Pulsed (Icm) 15 A
Td (on/off) @ 25°C 7ns/18ns
Switching Energy 200μJ (on), 70μJ (off)
Reverse Recovery Time (trr) 40 ns
Product Category IGBT Transistors
Просмотр сходства
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