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BIDNW30N60H3 Технические параметры

Bourns Inc.  BIDNW30N60H3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247N-3L
Mfr Bourns Inc.
Package Tube
Product Status Active
Current-Collector (Ic) (Max) 60 A
Test Conditions 400V, 30A, 10Ohm, 15V
Base Product Number BIDNW30N
Maximum Gate Emitter Voltage ±20V
Package Type TO-247N
Maximum Collector Emitter Voltage 600 V
Pd - Power Dissipation 230 W
Maximum Operating Temperature + 150 C
Collector-Emitter Saturation Voltage 1.65 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 600
Continuous Collector Current at 25 C 60 A
Mounting Styles Through Hole
Manufacturer Bourns
Свойство продукта Значение свойства
Brand Bourns
Continuous Collector Current Ic Max 60 A
RoHS Details
Collector- Emitter Voltage VCEO Max 600 V
Series -
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tube
Subcategory IGBTs
Technology Si
Configuration Single Diode
Input Type Standard
Power - Max 230 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 76 nC
Current - Collector Pulsed (Icm) 120 A
Td (on/off) @ 25°C 30ns/67ns
Switching Energy 1.85mJ (on), 450μJ (off)
Reverse Recovery Time (trr) 28 ns
Product Category IGBT Transistors
Просмотр сходства
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