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BIDW50N65T Технические параметры

Bourns Inc.  BIDW50N65T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Mfr Bourns Inc.
Package Tube
Product Status Active
Current-Collector (Ic) (Max) 100 A
Test Conditions 400V, 50A, 10Ohm, 15V
Base Product Number BIDW50N
Maximum Gate Emitter Voltage ±20V
Package Type TO-247
Maximum Collector Emitter Voltage 650 V
Pd - Power Dissipation 416 W
Maximum Operating Temperature + 150 C
Collector-Emitter Saturation Voltage 1.65 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 600
Continuous Collector Current at 25 C 100 A
Mounting Styles Through Hole
Manufacturer Bourns
Свойство продукта Значение свойства
Brand Bourns
Continuous Collector Current Ic Max 100 A
RoHS Details
Collector- Emitter Voltage VCEO Max 650 V
Series -
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tube
Subcategory IGBTs
Technology Si
Configuration Single Diode
Input Type Standard
Power - Max 416 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 650 V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
IGBT Type Trench Field Stop
Gate Charge 123 nC
Current - Collector Pulsed (Icm) 150 A
Td (on/off) @ 25°C 37ns/125ns
Switching Energy 3mJ (on), 1.1mJ (off)
Reverse Recovery Time (trr) 37.5 ns
Product Category IGBT Transistors
Просмотр сходства
BIDW50N65T brand manufacturers: Bourns Inc., Anli stock, BIDW50N65T reference price.Bourns Inc.. BIDW50N65T parameters, BIDW50N65T Datasheet PDF and pin diagram description download.You can use the BIDW50N65T Transistors - IGBTs - Single, DSP Datesheet PDF, find BIDW50N65T pin diagram and circuit diagram and usage method of function,BIDW50N65T electronics tutorials.You can download from the Anli.