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BUT11-S Технические параметры
Bourns Inc. BUT11-S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 400V | |
| Current-Collector (Ic) (Max) | 5A | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Bulk | |
| Published | 1993 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 100W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 12MHz | |
| Base Part Number | BUT11 | |
| Configuration | Single | |
| Power Dissipation | 100W | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 400V | |
| Max Collector Current | 5A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA 5V | |
| Current - Collector Cutoff (Max) | 50μA | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 600mA, 3A | |
| Collector Base Voltage (VCBO) | 850V | |
| Emitter Base Voltage (VEBO) | 10V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
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