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TIP115-S Технические параметры

Bourns, Inc.  TIP115-S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Through Hole
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Automotive No
PPAP No
Number of Elements per Chip 1
Maximum Collector-Emitter Voltage (V) 60
Maximum Collector Base Voltage (V) 60
Maximum Emitter Base Voltage (V) 5
Maximum Continuous DC Collector Current (A) 4
Maximum Collector Cut-Off Current (uA) 1000
Maximum Collector-Emitter Saturation Voltage (V) 2.5@8mA@2A
Minimum DC Current Gain 1000@1A@4V|500@2A@4V
Maximum Power Dissipation (mW) 50000
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 8.72(Max)
Package Width 4.7(Max)
Свойство продукта Значение свойства
Package Length 10.4(Max)
PCB changed 3
Tab Tab
Standard Package Name TO-220
Supplier Package TO-220
Lead Shape Through Hole
Number of Elements 1 Element
RoHS Compliant
Part Status Obsolete
Type PNP
Max Operating Temperature 150 °C
Min Operating Temperature -65 °C
Pin Count 3
Polarity PNP
Configuration Single
Element Configuration Single
Collector Emitter Voltage (VCEO) 60 V
Collector Base Voltage (VCBO) 60 V
Emitter Base Voltage (VEBO) 5 V
Radiation Hardening No
Просмотр сходства
TIP115-S brand manufacturers: Bourns, Inc., Anli stock, TIP115-S reference price.Bourns, Inc.. TIP115-S parameters, TIP115-S Datasheet PDF and pin diagram description download.You can use the TIP115-S Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find TIP115-S pin diagram and circuit diagram and usage method of function,TIP115-S electronics tutorials.You can download from the Anli.