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TIPL770-S Технические параметры

Bourns Inc.  TIPL770-S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 400V
Number of Elements 1 Element
hFEMin 20
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 50W
Свойство продукта Значение свойства
Frequency 12MHz
Element Configuration Single
Power Dissipation 50W
Gain Bandwidth Product 12MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V
Current - Collector Cutoff (Max) 5μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 500mA, 2.5A
Collector Base Voltage (VCBO) 850V
Emitter Base Voltage (VEBO) 10V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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TIPL770-S Документы

TIPL770-S brand manufacturers: Bourns Inc., Anli stock, TIPL770-S reference price.Bourns Inc.. TIPL770-S parameters, TIPL770-S Datasheet PDF and pin diagram description download.You can use the TIPL770-S Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find TIPL770-S pin diagram and circuit diagram and usage method of function,TIPL770-S electronics tutorials.You can download from the Anli.