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4N25-300E Технические параметры

Broadcom Limited  4N25-300E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка
Factory Lead Time 17 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Gull Wing
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 30V
Collector-Emitter Saturation Voltage 500mV
Current Transfer Ratio-Min 20% @ 10mA
Number of Elements 1 Element
Operating Temperature -55°C~100°C
Packaging Tube
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Max Power Dissipation 250mW
Base Part Number 4N25
Approval Agency CSA, UL, VDE
Voltage - Isolation 2500Vrms
Output Voltage 30V
Свойство продукта Значение свойства
Output Type Transistor with Base
Configuration SINGLE
Power Dissipation 250mW
Output Current 100mA
Voltage - Forward (Vf) (Typ) 1.2V
Input Type DC
Optoelectronic Device Type TRANSISTOR OUTPUT OPTOCOUPLER
Forward Current 80mA
Max Output Voltage 30V
Output Current per Channel 100mA
Rise Time 3μs
Fall Time (Typ) 3 μs
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 100mA
Rise / Fall Time (Typ) 3μs 3μs
Reverse Breakdown Voltage 6V
Max Input Current 80mA
Input Current 10mA
Current Transfer Ratio 20%
Dark Current-Max 50nA
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

4N25-300E Документы

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