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4N35-000E Технические параметры
Broadcom Limited 4N35-000E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optoisolators - Transistor, Photovoltaic Output | |
| Марка | ||
| Factory Lead Time | 22 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 6-DIP (0.300, 7.62mm) | |
| Number of Pins | 6Pins | |
| Breakdown Voltage / V | 30V | |
| Collector-Emitter Breakdown Voltage | 70V | |
| Current Transfer Ratio-Min | 100% @ 10mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~100°C | |
| Packaging | Tube | |
| Published | 2007 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Additional Feature | UL RECOGNIZED | |
| Max Power Dissipation | 350mW | |
| Base Part Number | 4N35 | |
| Approval Agency | CSA, UL, VDE | |
| Voltage - Isolation | 3550Vrms |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Output Voltage | 30V | |
| Output Type | Transistor with Base | |
| Configuration | SINGLE | |
| Power Dissipation | 350mW | |
| Voltage - Forward (Vf) (Typ) | 1.2V | |
| Input Type | DC | |
| Optoelectronic Device Type | TRANSISTOR OUTPUT OPTOCOUPLER | |
| Forward Current | 60mA | |
| Max Output Voltage | 30V | |
| Output Current per Channel | 100mA | |
| Rise Time | 10μs | |
| Fall Time (Typ) | 10 μs | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Max Collector Current | 100mA | |
| Rise / Fall Time (Typ) | 3μs 3μs | |
| Reverse Breakdown Voltage | 6V | |
| Max Input Current | 60mA | |
| Input Current | 10mA | |
| Current Transfer Ratio | 100% | |
| Dark Current-Max | 500000nA | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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