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4N35-500E Технические параметры

Broadcom Limited  4N35-500E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка
Factory Lead Time 17 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Gull Wing
Number of Pins 6Pins
Current Transfer Ratio-Min 100% @ 10mA
Number of Elements 1 Element
Operating Temperature -55°C~100°C
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Max Power Dissipation 350mW
Base Part Number 4N35
Voltage - Isolation 3550Vrms
Output Voltage 30V
Output Type Transistor with Base
Свойство продукта Значение свойства
Configuration SINGLE
Power Dissipation 350mW
Output Current 100mA
Voltage - Forward (Vf) (Typ) 1.2V
Input Type DC
Optoelectronic Device Type TRANSISTOR OUTPUT OPTOCOUPLER
Forward Current 60mA
Max Output Voltage 30V
Output Current per Channel 100mA
Rise Time 10μs
Fall Time (Typ) 10 μs
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
Rise / Fall Time (Typ) 3μs 3μs
Reverse Breakdown Voltage 6V
Max Input Current 60mA
Input Current 10mA
Current Transfer Ratio 100%
Dark Current-Max 500000nA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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4N35-500E Документы

4N35-500E brand manufacturers: Broadcom Limited, Anli stock, 4N35-500E reference price.Broadcom Limited. 4N35-500E parameters, 4N35-500E Datasheet PDF and pin diagram description download.You can use the 4N35-500E Optoisolators - Transistor, Photovoltaic Output, DSP Datesheet PDF, find 4N35-500E pin diagram and circuit diagram and usage method of function,4N35-500E electronics tutorials.You can download from the Anli.