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4N55/883B Технические параметры

Broadcom Limited  4N55/883B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка
Factory Lead Time 17 Weeks
Contact Plating Gold
Mount Through Hole
Mounting Type Through Hole
Package / Case 16-DIP (0.300, 7.62mm)
Number of Pins 16Pins
Current Transfer Ratio-Min 9% @ 16mA
Number of Elements 2 Elements
Usage Level Military grade
Operating Temperature -55°C~125°C
Packaging Tube
Published 2012
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
HTS Code 8541.40.80.00
Max Power Dissipation 200mW
Base Part Number 4N55
Voltage - Isolation 1500VDC
Свойство продукта Значение свойства
Output Voltage 20V
Output Type Transistor with Base
Supply Voltage-Min (Vsup) 2V
Configuration COMPLEX
Number of Channels 2Channels
Power Dissipation 200mW
Voltage - Forward (Vf) (Typ) 1.55V
Input Type DC
Optoelectronic Device Type LOGIC IC OUTPUT OPTOCOUPLER
Forward Current 20mA
Max Output Voltage 18V
Data Rate 0.4 MBps
Output Current per Channel 8mA
Max Collector Current 8mA
Reverse Breakdown Voltage 5V
Forward Voltage-Max 1.8V
Max Input Current 20mA
Input Current 20mA
Turn On / Turn Off Time (Typ) 400ns, 1μs
Current Transfer Ratio 20 %
Hysteresis Ratio-Nom 0.0125
RoHS Status ROHS3 Compliant

4N55/883B Документы

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