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6N135-000E Технические параметры

Broadcom Limited  6N135-000E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка
Factory Lead Time 22 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 8-DIP (0.300, 7.62mm)
Number of Pins 8Pins
Collector-Emitter Breakdown Voltage 20V
Current Transfer Ratio-Min 7% @ 16mA
Number of Elements 1 Element
Operating Temperature -55°C~100°C
Packaging Tube
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 100mW
Base Part Number 6N135
Approval Agency UL
Voltage - Isolation 3750Vrms
Output Voltage 15V
Output Type Transistor with Base
Свойство продукта Значение свойства
Max Output Current 8mA
Configuration SINGLE
Power Dissipation 100mW
Voltage - Forward (Vf) (Typ) 1.5V
Propagation Delay 1.5 μs
Input Type DC
Optoelectronic Device Type LOGIC IC OUTPUT OPTOCOUPLER
Forward Current 25mA
Max Output Voltage 20V
Data Rate 1 Mbps
Output Current per Channel 8mA
Rise Time 1.5μs
Fall Time (Typ) 1.5 μs
Max Collector Current 8mA
Reverse Breakdown Voltage 5V
Max Input Current 25mA
Input Current 16mA
Current Transfer Ratio (Max) 50% @ 16mA
Turn On / Turn Off Time (Typ) 200ns, 1.3μs
Baud Rate 1 Mbaud
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

6N135-000E Документы

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