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ATF-521P8-TR1 Технические параметры
Broadcom Limited ATF-521P8-TR1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Package / Case | 8-WFDFN Exposed Pad | |
| Number of Pins | 8Pins | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -65°C | |
| Voltage - Rated DC | 4.5V | |
| Max Power Dissipation | 1.5W | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 500mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 2GHz | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.5W | |
| Case Connection | SOURCE | |
| Current - Test | 200mA | |
| Transistor Application | AMPLIFIER | |
| Drain to Source Voltage (Vdss) | 7V | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | pHEMT FET | |
| Continuous Drain Current (ID) | 500mA | |
| JEDEC-95 Code | MO-229 | |
| Gate to Source Voltage (Vgs) | 1V | |
| Gain | 17dB | |
| Drain Current-Max (Abs) (ID) | 0.5A | |
| DS Breakdown Voltage-Min | 7V | |
| Power - Output | 26.5dBm | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Noise Figure | 1.5dB | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
ATF-521P8-TR1 Документы
- PCN Obsolescence/ EOLMult Devices EOL 01/Dec/2017
- PCN PackagingMult Devices Packing 25/Apr/2018 Alternate ESD Lock Reel Supplier 24/Jul/2014
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