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HSCH-5512 Технические параметры
Broadcom Limited HSCH-5512 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | ||
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature (Max.) | 175°C | |
| Published | 2006 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.60 | |
| Terminal Position | TRIPLE | |
| Terminal Form | FLAT |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-MTMW-F3 | |
| Qualification Status | Not Qualified | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | |
| Diode Type | MIXER DIODE | |
| Forward Voltage-Max | 0.5V | |
| Frequency Band | K B | |
| Diode Capacitance-Max | 0.15pF | |
| Type of Schottky Barrier | MEDIUM BARRIER | |
| Pulsed Input Power-Max | 0.15W | |
| Pulsed Input Power-Min | 1W | |
| RoHS Status | RoHS Compliant |
HSCH-5512 Документы
- PCN PackagingMult Devices Packing 25/Apr/2018
- DatasheetsHSCH-55XX
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