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HSMS-2800-TR1G Технические параметры

Broadcom Limited  HSMS-2800-TR1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 6 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Diode Element Material SILICON
Breakdown Voltage / V 70V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 35Ohm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
HTS Code 8541.10.00.80
Voltage - Rated DC 70V
Max Power Dissipation 250mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Base Part Number HSMS-2800
Max Current Rating 1A
Element Configuration Single
Diode Type Schottky - Single
Output Current 1A
Forward Current 1A
Max Reverse Leakage Current 200nA
Max Surge Current 1A
Forward Voltage 410mV
Max Reverse Voltage (DC) 70V
Max Repetitive Reverse Voltage (Vrrm) 70V
Capacitance @ Vr, F 2pF @ 0V 1MHz
Reverse Voltage (DC) 70V
Resistance @ If, F 35Ohm @ 5mA 1MHz
Diode Capacitance-Max 2pF
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

HSMS-2800-TR1G Документы

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