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CAT28C256N-20 Технические параметры
Catalyst Semiconductor CAT28C256N-20 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 32Terminals | |
| Package Description | QCCJ, LDCC32,.5X.6 | |
| Package Style | CHIP CARRIER | |
| Moisture Sensitivity Levels | 3 | |
| Number of Words Code | 32000Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | LDCC32,.5X.6 | |
| Reflow Temperature-Max (s) | 30 | |
| Access Time-Max | 200 ns | |
| Operating Temperature-Max | 70 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | CAT28C256N-20 | |
| Number of Words | 32768 wordsWord | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Package Code | QCCJ | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Catalyst Semiconductor | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | CATALYST SEMICONDUCTOR INC | |
| Risk Rank | 7.74 | |
| Part Package Code | QFJ | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Additional Feature | AUTOMATIC WRITE; PAGE WRITE | |
| HTS Code | 8542.32.00.51 | |
| Subcategory | EEPROMs | |
| Technology | CMOS |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | QUAD | |
| Terminal Form | J BEND | |
| Peak Reflow Temperature (Cel) | 240 | |
| Number of Functions | 1Function | |
| Terminal Pitch | 1.27 mm | |
| Reach Compliance Code | unknown | |
| Pin Count | 32 | |
| JESD-30 Code | R-PQCC-J32 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 5.5 V | |
| Power Supplies | 5 V | |
| Temperature Grade | COMMERCIAL | |
| Supply Voltage-Min (Vsup) | 4.5 V | |
| Operating Mode | ASYNCHRONOUS | |
| Supply Current-Max | 0.03 mA | |
| Organization | 32KX8 | |
| Seated Height-Max | 3.55 mm | |
| Memory Width | 8 | |
| Standby Current-Max | 0.00015 A | |
| Memory Density | 262144 bit | |
| Parallel/Serial | PARALLEL | |
| Memory IC Type | EEPROM | |
| Programming Voltage | 5 V | |
| Endurance | 10000 Write/Erase Cycles | |
| Write Cycle Time-Max (tWC) | 5 ms | |
| Data Polling | YES | |
| Toggle Bit | YES | |
| Command User Interface | NO | |
| Page Size | 64 words | |
| Width | 11.43 mm | |
| Length | 13.97 mm |
Индекс :
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