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2SC5509-T2-A Технические параметры

CEL  2SC5509-T2-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-343F
Number of Pins 4Pins
Collector-Emitter Breakdown Voltage 3.3V
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 190mW
Power - Max 190mW
Свойство продукта Значение свойства
Transistor Type NPN
Collector Emitter Voltage (VCEO) 3.3V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 2V
Gain 14dB
Max Breakdown Voltage 3.3V
Frequency - Transition 15GHz
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 1.5V
Noise Figure (dB Typ @ f) 1.2dB @ 2GHz
Height 590μm
Length 2mm
Width 1.25mm
RoHS Status RoHS Compliant

2SC5509-T2-A Документы

2SC5509-T2-A brand manufacturers: CEL, Anli stock, 2SC5509-T2-A reference price.CEL. 2SC5509-T2-A parameters, 2SC5509-T2-A Datasheet PDF and pin diagram description download.You can use the 2SC5509-T2-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find 2SC5509-T2-A pin diagram and circuit diagram and usage method of function,2SC5509-T2-A electronics tutorials.You can download from the Anli.