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NE3210S01-T1B Технические параметры
CEL NE3210S01-T1B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Package / Case | 4-SMD | |
| Number of Pins | 1Pin | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -65°C | |
| Additional Feature | HIGH RELIABILITY | |
| Max Power Dissipation | 165mW | |
| Terminal Position | RADIAL | |
| Terminal Form | GULL WING | |
| Current Rating | 15mA | |
| Frequency | 12GHz | |
| Pin Count | 4 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | O-PRDB-G4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Power Dissipation | 165mW | |
| Case Connection | SOURCE | |
| Current - Test | 10mA | |
| Drain to Source Voltage (Vdss) | 4V | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | HFET | |
| Continuous Drain Current (ID) | 70mA | |
| Gate to Source Voltage (Vgs) | -3V | |
| Gain | 13.5dB | |
| Drain to Source Breakdown Voltage | 4V | |
| FET Technology | HETERO-JUNCTION | |
| Noise Figure | 0.35dB | |
| Voltage - Test | 2V | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
Индекс :
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