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NE3512S02-T1C-A Технические параметры

CEL  NE3512S02-T1C-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка CEL
Mount Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4Pins
Number of Elements 1 Element
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Operating Temperature 125°C
Min Operating Temperature -65°C
Max Power Dissipation 165mW
Terminal Position QUAD
Peak Reflow Temperature (Cel) 260
Current Rating 70mA
Frequency 12GHz
Time@Peak Reflow Temperature-Max (s) 10
Свойство продукта Значение свойства
Base Part Number NE3512
Pin Count 4
Configuration SINGLE
Operating Mode DEPLETION MODE
Output Power 165mW
Current - Test 10mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 4V
Polarity/Channel Type N-CHANNEL
Transistor Type HFET
Continuous Drain Current (ID) 70mA
Gate to Source Voltage (Vgs) -3V
Gain 13.5dB
Drain Current-Max (Abs) (ID) 0.015A
FET Technology HETERO-JUNCTION
Noise Figure 0.35dB
Voltage - Test 2V
Min Breakdown Voltage 3V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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