Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
CEL NE3512S02-T1C-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Package / Case | 4-SMD, Flat Leads | |
| Number of Pins | 4Pins | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e6 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -65°C | |
| Max Power Dissipation | 165mW | |
| Terminal Position | QUAD | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 70mA | |
| Frequency | 12GHz | |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | NE3512 | |
| Pin Count | 4 | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Output Power | 165mW | |
| Current - Test | 10mA | |
| Transistor Application | AMPLIFIER | |
| Drain to Source Voltage (Vdss) | 4V | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | HFET | |
| Continuous Drain Current (ID) | 70mA | |
| Gate to Source Voltage (Vgs) | -3V | |
| Gain | 13.5dB | |
| Drain Current-Max (Abs) (ID) | 0.015A | |
| FET Technology | HETERO-JUNCTION | |
| Noise Figure | 0.35dB | |
| Voltage - Test | 2V | |
| Min Breakdown Voltage | 3V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |