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NE3515S02-T1C-A Технические параметры
CEL NE3515S02-T1C-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Package / Case | 4-SMD, Flat Leads | |
| Number of Pins | 4Pins | |
| Supplier Device Package | S02 | |
| Voltage Rated | 4V | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -65°C | |
| Current Rating (Amps) | 88mA | |
| Max Power Dissipation | 165mW | |
| Current Rating | 88mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 12GHz | |
| Base Part Number | NE3515 | |
| Current - Test | 10mA | |
| Drain to Source Voltage (Vdss) | 4V | |
| Transistor Type | HFET | |
| Continuous Drain Current (ID) | 88mA | |
| Gate to Source Voltage (Vgs) | -3V | |
| Gain | 12.5dB | |
| Power - Output | 14dBm | |
| Noise Figure | 0.3dB | |
| Voltage - Test | 2V | |
| Min Breakdown Voltage | 3V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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