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NE3515S02-T1D-A Технические параметры

CEL  NE3515S02-T1D-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка CEL
Package / Case 4-SMD, Flat Leads
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 125°C
Max Power Dissipation 165mW
Current Rating 88mA
Frequency 12GHz
Свойство продукта Значение свойства
Current - Test 10mA
Drain to Source Voltage (Vdss) 4V
Transistor Type HFET
Continuous Drain Current (ID) 88mA
Gate to Source Voltage (Vgs) -3V
Gain 12.5dB
Power - Output 14dBm
Noise Figure 0.3dB
Voltage - Test 2V
RoHS Status RoHS Compliant

NE3515S02-T1D-A Документы

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