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NE58219-T1-A Технические параметры
CEL NE58219-T1-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-75, SOT-416 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 12V | |
| Number of Elements | 1 Element | |
| hFEMin | 120 | |
| Packaging | Cut Tape (CT) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 100mW | |
| Frequency | 5GHz |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | NE58219 | |
| Element Configuration | Single | |
| Power Dissipation | 100mW | |
| Output Power | 100mW | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 12V | |
| Max Collector Current | 60mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA 5V | |
| Max Breakdown Voltage | 12V | |
| Collector Base Voltage (VCBO) | 20V | |
| Emitter Base Voltage (VEBO) | 3V | |
| Continuous Collector Current | 60mA | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
NE58219-T1-A Документы
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