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NE66219-T1-A Технические параметры

CEL  NE66219-T1-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 3.3V
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 115mW
Frequency 21GHz
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 115mW
Output Power 115mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 3.3V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 2V
Gain 14dB
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 35mA
Noise Figure (dB Typ @ f) 1.2dB @ 2GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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NE66219-T1-A Документы

NE66219-T1-A brand manufacturers: CEL, Anli stock, NE66219-T1-A reference price.CEL. NE66219-T1-A parameters, NE66219-T1-A Datasheet PDF and pin diagram description download.You can use the NE66219-T1-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE66219-T1-A pin diagram and circuit diagram and usage method of function,NE66219-T1-A electronics tutorials.You can download from the Anli.