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NE662M04-T2-A Технические параметры

CEL  NE662M04-T2-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-343F
Number of Pins 4Pins
Collector-Emitter Breakdown Voltage 3.3V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 115mW
Frequency 2GHz
Base Part Number NE662
Power Dissipation 115mW
Output Power 115mW
Свойство продукта Значение свойства
Gain Bandwidth Product 25 GHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 3.3V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA 2V
Gain 18dB
Max Breakdown Voltage 3.3V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 35mA
Noise Figure (dB Typ @ f) 1.1dB @ 2GHz
Height 590μm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Просмотр сходства

NE662M04-T2-A Документы

NE662M04-T2-A brand manufacturers: CEL, Anli stock, NE662M04-T2-A reference price.CEL. NE662M04-T2-A parameters, NE662M04-T2-A Datasheet PDF and pin diagram description download.You can use the NE662M04-T2-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE662M04-T2-A pin diagram and circuit diagram and usage method of function,NE662M04-T2-A electronics tutorials.You can download from the Anli.