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NE663M04-T2-A Технические параметры
CEL NE663M04-T2-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-343F | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 3.3V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 190mW | |
| Frequency | 15GHz | |
| Element Configuration | Single |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation | 190mW | |
| Output Power | 190mW | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 3.3V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA 2V | |
| Gain | 14dB | |
| Collector Base Voltage (VCBO) | 15V | |
| Emitter Base Voltage (VEBO) | 1.5V | |
| Continuous Collector Current | 100mA | |
| Noise Figure (dB Typ @ f) | 1.2dB @ 2GHz | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
NE663M04-T2-A Документы
- PCN Obsolescence/ EOLEOL 12/Aug/2016 EOL Revision 10/Nov/2016
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