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NE678M04-A Технические параметры
CEL NE678M04-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-343F | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 6V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 205mW | |
| Frequency | 1.8GHz |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | NE678 | |
| Power Dissipation | 205mW | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 6V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 30mA 3V | |
| Gain | 13.5dB | |
| Frequency - Transition | 12GHz | |
| Collector Base Voltage (VCBO) | 9V | |
| Emitter Base Voltage (VEBO) | 2V | |
| Continuous Collector Current | 100mA | |
| Noise Figure (dB Typ @ f) | 1.7dB @ 2GHz | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
NE678M04-A Документы
- PCN Obsolescence/ EOLEOL 12/Aug/2016 EOL Revision 10/Nov/2016
- PCN Assembly/OriginWafer Fab Transfer 25/Feb/2015
- DatasheetsNE678M04-A-CEL-datasheet-11753582.pdf
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