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NE68030-T1-A Технические параметры

CEL  NE68030-T1-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 10V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150mW
Frequency 10GHz
Base Part Number NE68030
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 150mW
Output Power 150mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 10V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA 3V
Gain 9.4dB
Max Breakdown Voltage 10V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 35mA
Noise Figure (dB Typ @ f) 1.9dB @ 2GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

NE68030-T1-A Документы

NE68030-T1-A brand manufacturers: CEL, Anli stock, NE68030-T1-A reference price.CEL. NE68030-T1-A parameters, NE68030-T1-A Datasheet PDF and pin diagram description download.You can use the NE68030-T1-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE68030-T1-A pin diagram and circuit diagram and usage method of function,NE68030-T1-A electronics tutorials.You can download from the Anli.