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NE68519-T1-A Технические параметры

CEL  NE68519-T1-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3Pins
Current-Collector (Ic) (Max) 30mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 125mW
Frequency 12GHz
Свойство продукта Значение свойства
Base Part Number NE68519
Power Dissipation 125mW
Output Power 125mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 6V
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 10mA 3V
Gain 11dB
Collector Base Voltage (VCBO) 9V
Emitter Base Voltage (VEBO) 2V
Noise Figure (dB Typ @ f) 1.5dB @ 2GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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NE68519-T1-A Документы

NE68519-T1-A brand manufacturers: CEL, Anli stock, NE68519-T1-A reference price.CEL. NE68519-T1-A parameters, NE68519-T1-A Datasheet PDF and pin diagram description download.You can use the NE68519-T1-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE68519-T1-A pin diagram and circuit diagram and usage method of function,NE68519-T1-A electronics tutorials.You can download from the Anli.