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NE68530-T1 Технические параметры

CEL  NE68530-T1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 6V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code unknown
Свойство продукта Значение свойства
Base Part Number NE68530
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 150mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 10mA 3V
Gain 7dB
Transition Frequency 12000MHz
Max Breakdown Voltage 6V
Frequency - Transition 12GHz
Continuous Collector Current 30mA
Highest Frequency Band S B
Collector-Base Capacitance-Max 0.7pF
Noise Figure (dB Typ @ f) 1.5dB ~ 2.5dB @ 2GHz
RoHS Status Non-RoHS Compliant
Просмотр сходства

NE68530-T1 Документы

NE68530-T1 brand manufacturers: CEL, Anli stock, NE68530-T1 reference price.CEL. NE68530-T1 parameters, NE68530-T1 Datasheet PDF and pin diagram description download.You can use the NE68530-T1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE68530-T1 pin diagram and circuit diagram and usage method of function,NE68530-T1 electronics tutorials.You can download from the Anli.