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NE685M03-T1-A Технические параметры

CEL  NE685M03-T1-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-623F
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 5V
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 125mW
Base Part Number NE685
Element Configuration Single
Power Dissipation 125mW
Transistor Type NPN
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 10mA 3V
Frequency - Transition 12GHz
Continuous Collector Current 30mA
Noise Figure (dB Typ @ f) 1.5dB ~ 2.5dB @ 2GHz
RoHS Status RoHS Compliant

NE685M03-T1-A Документы

NE685M03-T1-A brand manufacturers: CEL, Anli stock, NE685M03-T1-A reference price.CEL. NE685M03-T1-A parameters, NE685M03-T1-A Datasheet PDF and pin diagram description download.You can use the NE685M03-T1-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE685M03-T1-A pin diagram and circuit diagram and usage method of function,NE685M03-T1-A electronics tutorials.You can download from the Anli.