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NE68819-A Технические параметры
CEL NE68819-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-523 | |
| Supplier Device Package | 3-SuperMiniMold (19) | |
| Collector-Emitter Breakdown Voltage | 6V | |
| Current-Collector (Ic) (Max) | 100mA | |
| hFEMin | 70 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 125mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | NE68819 | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Power - Max | 125mW | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 6V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 3mA 1V | |
| Voltage - Collector Emitter Breakdown (Max) | 6V | |
| Frequency - Transition | 5GHz | |
| Emitter Base Voltage (VEBO) | 2V | |
| Continuous Collector Current | 100mA | |
| Noise Figure (dB Typ @ f) | 1.7dB ~ 2.5dB @ 2GHz | |
| RoHS Status | RoHS Compliant |
NE68819-A Документы
- DatasheetsNE688 Series
- PCN Obsolescence/ EOLMultiple Devices 04/Sep/2013
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