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CEL NE68819-T1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-523 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 6V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| HTS Code | 8541.21.00.75 | |
| Max Power Dissipation | 125mW | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Frequency | 9.5GHz | |
| Base Part Number | NE68819 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Power Dissipation | 125mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 3mA 1V | |
| Transition Frequency | 9500MHz | |
| Frequency - Transition | 5GHz | |
| Emitter Base Voltage (VEBO) | 2V | |
| Continuous Collector Current | 100mA | |
| Collector-Base Capacitance-Max | 0.8pF | |
| Noise Figure (dB Typ @ f) | 1.7dB ~ 2.5dB @ 2GHz | |
| RoHS Status | Non-RoHS Compliant |