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NE68830-A Технические параметры

CEL  NE68830-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SOT-323
Collector-Emitter Breakdown Voltage 6V
Current-Collector (Ic) (Max) 100mA
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150mW
Свойство продукта Значение свойства
Polarity NPN
Element Configuration Single
Power Dissipation 150mW
Power - Max 150mW
Transistor Type NPN
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 3mA 1V
Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 4.5GHz
Continuous Collector Current 100mA
Noise Figure (dB Typ @ f) 1.7dB ~ 2.5dB @ 2GHz
RoHS Status RoHS Compliant

NE68830-A Документы

NE68830-A brand manufacturers: CEL, Anli stock, NE68830-A reference price.CEL. NE68830-A parameters, NE68830-A Datasheet PDF and pin diagram description download.You can use the NE68830-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE68830-A pin diagram and circuit diagram and usage method of function,NE68830-A electronics tutorials.You can download from the Anli.